IRF7749L2TRPBF

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

4V @ 250μA

Number Of Channels

1

Power Dissipation

3.8W

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

43ns

Max Junction Temperature Tj

175°C

Drain Currentmax Abs Id

375A

Vgs Max

±20V

Radyasyon Dayanımı

No

Pin Sayısı

8

Power Dissipation Max

3.3W Ta 125W Tc

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XBCC-N9

Configuration

SINGLE WITH BUILT-IN DIODE

Yükseklik

740μm

Input Capacitance Ciss Max Vds

12320pF @ 25V

Rds On Max Id Vgs

1.5m Ω @ 120A, 10V

Threshold Voltage

4V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Turn On Delay Time

29 ns

JESD-609 Kodu

e1

Genişlik

7.112mm

Montaj Tipi

Surface Mount

Terminal Pozisyonu

BOTTOM

Nominal Vgs

2.9 V

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

33A

Parça Durumu

Not For New Designs

Fet Type

N-Channel

Gate To Source Voltage Vgs

60V

Terminal Sayısı

9

Current Continuous Drain Id25

33A Ta 375A Tc

Case Connection

DRAIN

Transistor Application

SWITCHING

Number Of Elements

1

Avalanche Energy Rating Eas

260 mJ

Terminal Kaplaması

TIN SILVER COPPER