IRF7739L2TRPBF

Teknik Özellikler

Gate Charge Qg Max Vgs

330nC @ 10V

Turn Off Delay Time

56 ns

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Terminal Kaplaması

TIN SILVER COPPER

Yayın Yılı

2007

Avalanche Energy Rating Eas

270 mJ

Number Of Elements

1

Uzunluk

9.144mm

Tepe Reflow Süresi (maks. sn)

30

Fall Time Typ

42 ns

Drain To Source Breakdown Voltage

40V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

DirectFET™ Isometric L8

Seri

HEXFET®

Terminal Pozisyonu

BOTTOM

Genişlik

7.112mm

Montaj Tipi

Surface Mount

Turn On Delay Time

21 ns

JESD-609 Kodu

e1

Transistor Application

SWITCHING

Case Connection

DRAIN

Current Continuous Drain Id25

46A Ta 375A Tc

Terminal Sayısı

9

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

46A

Fet Type

N-Channel

Parça Durumu

Not For New Designs

Drive Voltage Max Rds On Min Rds On

10V

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-XBCC-N9

Power Dissipation Max

3.8W Ta 125W Tc

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Rds On Max Id Vgs

1m Ω @ 160A, 10V

Input Capacitance Ciss Max Vds

11880pF @ 25V

Yükseklik

508μm

Kurşunsuz

Lead Free