IRF7665S2TRPBF

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

Rise Time

6.4ns

Power Dissipation

30W

Vgs Max

±20V

Radyasyon Dayanımı

No

Pin Sayısı

3

Vgsth Max Id

5V @ 25μA

Yükseklik

508μm

Input Capacitance Ciss Max Vds

515pF @ 25V

Rds On Max Id Vgs

62m Ω @ 8.9A, 10V

Threshold Voltage

4V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.4W Ta 30W Tc

Jesd30 Code

R-XBCC-N2

Configuration

SINGLE WITH BUILT-IN DIODE

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Parça Durumu

Obsolete

Continuous Drain Current Id

14.4A

Gate To Source Voltage Vgs

20V

Terminal Sayısı

2

Current Continuous Drain Id25

4.1A Ta 14.4A Tc

Transistor Application

SWITCHING

Case Connection

DRAIN

JESD-609 Kodu

e3

Turn On Delay Time

3.8 ns

Pulsed Drain Currentmax Idm

58A

Montaj Tipi

Surface Mount

Genişlik

3.9624mm

Nominal Vgs

4 V

Terminal Pozisyonu

BOTTOM

Reach Svhc

No SVHC

Kılıf / Paket

DirectFET™ Isometric SB

Fabrika Tedarik Süresi

13 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

100V

Fall Time Typ

3.6 ns