IRF7607TRPBF

Teknik Özellikler

Seri

HEXFET®

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Reach Svhc

No SVHC

Uzunluk

3mm

Fall Time Typ

16 ns

Drain To Source Breakdown Voltage

20V

Nem Hassasiyeti (MSL)

2 (1 Year)

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Yayın Yılı

2001

Voltage Rated Dc

20V

Gate Charge Qg Max Vgs

22nC @ 5V

Turn Off Delay Time

36 ns

Drainsource On Resistancemax

0.03Ohm

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Gate To Source Voltage Vgs

12V

Continuous Drain Current Id

6.5A

Fet Type

N-Channel

Parça Durumu

Active

Current Continuous Drain Id25

6.5A Ta

Terminal Sayısı

8

Transistor Application

SWITCHING

Turn On Delay Time

8.5 ns

Genişlik

3mm

Pulsed Drain Currentmax Idm

50A

Montaj Tipi

Surface Mount

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

1310pF @ 15V

Yükseklik

860μm

Element Configuration

Single

Rds On Max Id Vgs

30m Ω @ 6.5A, 4.5V

Threshold Voltage

1.2V

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Power Dissipation Max

1.8W Ta

Operating Mode

ENHANCEMENT MODE

Akım Değeri

6.5A

Power Dissipation

1.8W