IRF7601TRPBF

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.035Ohm

Turn Off Delay Time

24 ns

Gate Charge Qg Max Vgs

22nC @ 4.5V

Yayın Yılı

1997

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

1.8W Ta

Number Of Elements

1

Drain To Source Breakdown Voltage

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

32 ns

Uzunluk

3mm

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

35m Ω @ 3.8A, 4.5V

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Fabrika Tedarik Süresi

12 Weeks

Yükseklik

860μm

Input Capacitance Ciss Max Vds

650pF @ 15V

Seri

HEXFET®

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

Pulsed Drain Currentmax Idm

30A

Montaj Tipi

Surface Mount

Genişlik

3mm

Additional Feature

ULTRA LOW RESISTANCE

Vgsth Max Id

700mV @ 250μA

Turn On Delay Time

5.1 ns

Pin Sayısı

8

Transistor Application

SWITCHING

Vgs Max

±12V

Terminal Sayısı

8

Current Continuous Drain Id25

5.7A Ta

Radyasyon Dayanımı

No

Fet Type

N-Channel

Parça Durumu

Active

Continuous Drain Current Id

5.7A