IRF7480MTRPBF

Teknik Özellikler

Kılıf / Paket

DirectFET™ Isometric ME

Rds On Max Id Vgs

1.2m Ω @ 132A, 10V

Fabrika Tedarik Süresi

10 Weeks

Element Configuration

Single

Input Capacitance Ciss Max Vds

6680pF @ 25V

Seri

HEXFET®, StrongIRFET™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

58 ns

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Jesd30 Code

R-XBCC-N6

Yayın Yılı

2007

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

40V

Power Dissipation Max

96W Tc

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

206 mJ

Number Of Elements

1

Gate Charge Qg Max Vgs

185nC @ 10V

Turn Off Delay Time

68 ns

Continuous Drain Current Id

217A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

6V 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

70ns

Pin Sayısı

10

Case Connection

DRAIN

Transistor Application

SWITCHING

Terminal Sayısı

6

Vgs Max

±20V

Ds Breakdown Voltagemin

40V

Current Continuous Drain Id25

217A Tc

Pulsed Drain Currentmax Idm

868A

Number Of Channels

1

Montaj Tipi

Surface Mount