IRF7476TRPBF

Teknik Özellikler

Fall Time Typ

8.3 ns

Uzunluk

4.9784mm

Drain To Source Breakdown Voltage

12V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Rds On Max Id Vgs

8m Ω @ 15A, 4.5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

2550pF @ 6V

Seri

HEXFET®

Element Configuration

Single

Yükseklik

1.4986mm

Turn Off Delay Time

19 ns

Gate Charge Qg Max Vgs

40nC @ 4.5V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2006

Montaj

Surface Mount

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.5W Ta

Transistor Application

SWITCHING

Pin Sayısı

8

Current Continuous Drain Id25

15A Ta

Radyasyon Dayanımı

No

Vgs Max

±12V

Terminal Sayısı

8

Gate To Source Voltage Vgs

12V

Fet Type

N-Channel

Parça Durumu

Not For New Designs

Continuous Drain Current Id

15A

Rise Time

29ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

2.5W

Drive Voltage Max Rds On Min Rds On

2.8V 4.5V

Terminal Formu

GULL WING

Terminal Pozisyonu

DUAL

Montaj Tipi

Surface Mount

Genişlik

3.9878mm