IRF7406TRPBF

Teknik Özellikler

Power Dissipation Max

2.5W Ta

Operating Mode

ENHANCEMENT MODE

Akım Değeri

-5.8A

Input Capacitance Ciss Max Vds

1100pF @ 25V

Yükseklik

1.75mm

Element Configuration

Single

Threshold Voltage

-1V

Rds On Max Id Vgs

45m Ω @ 2.8A, 10V

Ambalaj

Tape & Reel (TR)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Contact Plating

Tin

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

1V @ 250μA

Additional Feature

ULTRA LOW RESISTANCE

Number Of Channels

1

Kurşunsuz

Lead Free

Terminal Formu

GULL WING

Power Dissipation

2.5W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

33ns

Dual Supply Voltage

-30V

Max Junction Temperature Tj

150°C

Radyasyon Dayanımı

No

Vgs Max

±20V

Pin Sayısı

8

Direnç

45mOhm

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

30V

Montaj

Surface Mount

Voltage Rated Dc

-30V

Yayın Yılı

2004

Gate Charge Qg Max Vgs

59nC @ 10V

Turn Off Delay Time

45 ns

Row Spacing

6.3 mm

Seri

HEXFET®

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Reach Svhc

No SVHC