IRF7210PBF

Teknik Özellikler

Maks. Çalışma Sıcaklığı

150°C

Ambalaj

Tube

Uzunluk

4.9784mm

Fall Time Typ

30 ns

Drain To Source Breakdown Voltage

-12V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

17179pF @ 10V

Seri

HEXFET®

Yükseklik

1.4986mm

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage

600mV

Rds On Max Id Vgs

7mOhm @ 16A, 4.5V

Reach Svhc

No SVHC

Input Capacitance

17.179nF

Gate Charge Qg Max Vgs

212nC @ 5V

Turn Off Delay Time

6.5 ns

Number Of Elements

1

Power Dissipation Max

2.5W Ta

RoHS Durumu

RoHS Compliant

Drain To Source Voltage Vdss

12V

Montaj

Surface Mount

Yayın Yılı

2004

Terminal

SMD/SMT

Radyasyon Dayanımı

No

Rds On Max

7 mΩ

Current Continuous Drain Id25

16A Ta

Vgs Max

±12V

Drain To Source Resistance

7mOhm

Recovery Time

247 ns

Pin Sayısı

8

Direnç

7mOhm

Power Dissipation

2.5W

Rise Time

3ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Dual Supply Voltage

12V

Tedarikçi Cihaz Paketi

8-SO

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Gate To Source Voltage Vgs

12V

Continuous Drain Current Id

-16A

Min. Çalışma Sıcaklığı

-55°C