IRF6795MTRPBF

Teknik Özellikler

Rds On Max Id Vgs

1.8m Ω @ 32A, 10V

Kılıf / Paket

DirectFET™ Isometric MX

Fabrika Tedarik Süresi

12 Weeks

Yükseklik

506μm

Input Capacitance Ciss Max Vds

4280pF @ 13V

Seri

HEXFET®

Drain To Source Breakdown Voltage

25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

11 ns

Uzunluk

6.35mm

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2010

Montaj

Surface Mount

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Jesd30 Code

R-XBCC-N3

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

2.8W Ta 75W Tc

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

53nC @ 4.5V

Turn Off Delay Time

16 ns

Parça Durumu

Active

Fet Type

N-Channel

Continuous Drain Current Id

32A

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rise Time

27ns

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

75W

Pin Sayısı

7

Case Connection

DRAIN

Transistor Application

SWITCHING

Vgs Max

±20V

Terminal Sayısı

3

Radyasyon Dayanımı

No

Current Continuous Drain Id25

32A Ta 160A Tc

Pulsed Drain Currentmax Idm

250A