IRF6727MTRPBF

Teknik Özellikler

Power Dissipation

89W

Rise Time

31ns

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Continuous Drain Current Id

32A

Parça Durumu

Active

Fet Type

N-Channel

Radyasyon Dayanımı

No

Current Continuous Drain Id25

32A Ta 180A Tc

Terminal Sayısı

3

Vgs Max

±20V

Transistor Application

SWITCHING

Case Connection

DRAIN

Pin Sayısı

5

Turn On Delay Time

21 ns

JESD-609 Kodu

e1

Vgsth Max Id

2.35V @ 100μA

Genişlik

5.0546mm

Pulsed Drain Currentmax Idm

260A

Montaj Tipi

Surface Mount

Terminal Pozisyonu

BOTTOM

Input Capacitance Ciss Max Vds

6190pF @ 15V

Seri

HEXFET®

Yükseklik

508μm

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

DirectFET™ Isometric MX

Threshold Voltage

1.8V

Rds On Max Id Vgs

1.7m Ω @ 32A, 10V

Reach Svhc

No SVHC

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Uzunluk

6.35mm

Fall Time Typ

16 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

30V

Number Of Elements

1

Power Dissipation Max

2.8W Ta 89W Tc

Operating Mode

ENHANCEMENT MODE