IRF6714MTRPBF

Teknik Özellikler

Pin Sayısı

5

Current Continuous Drain Id25

29A Ta 166A Tc

Montaj Tipi

Surface Mount

Vgsth Max Id

2.4V @ 100μA

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

89W

Seri

HEXFET®

Drain To Source Breakdown Voltage

25V

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

2.8W Ta 89W Tc

Direnç

2.1MOhm

Radyasyon Dayanımı

No

Rise Time

26ns

Yükseklik

506μm

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

DirectFET™ Isometric MX

Pulsed Drain Currentmax Idm

234A

Turn On Delay Time

18 ns

Gate Charge Qg Max Vgs

44nC @ 4.5V

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Çalışma Sıcaklığı

-40°C~150°C TJ

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

3

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

3890pF @ 13V

Transistor Application

SWITCHING

Jesd30 Code

R-XBCC-N3

Uzunluk

6.35mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

2.1m Ω @ 29A, 10V

Turn Off Delay Time

13 ns