IRF6710S2TR1PBF

Teknik Özellikler

Rds On Max Id Vgs

5.9mOhm @ 12A, 10V

Drain To Source Resistance

11.9mOhm

Yükseklik

558.8μm

Input Capacitance

1.19nF

Drain To Source Voltage Vdss

25V

Reach Svhc

No SVHC

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

5.2 ns

Fall Time Typ

6 ns

Gate To Source Voltage Vgs

20V

Genişlik

3.95mm

Yayın Yılı

2008

Continuous Drain Current Id

12A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Maks. Çalışma Sıcaklığı

175°C

Turn On Delay Time

7.9 ns

Min. Çalışma Sıcaklığı

-55°C

Kılıf / Paket

DirectFET™ Isometric S1

Tedarikçi Cihaz Paketi

DIRECTFET S1

Gate Charge Qg Max Vgs

13nC @ 4.5V

Montaj Tipi

Surface Mount

Rds On Max

5.9 mΩ

Recovery Time

21 ns

Pin Sayısı

6

Current Continuous Drain Id25

12A Ta 37A Tc

Number Of Elements

1

Dual Supply Voltage

25V

Vgsth Max Id

2.4V @ 25μA

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation

1.8W

Ambalaj

Tape & Reel (TR)

Terminal

Through Hole

Seri

HEXFET®

Drain To Source Breakdown Voltage

25V

Power Dissipation Max

1.8W Ta 15W Tc

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant