IRF6709S2TR1PBF

Teknik Özellikler

Rds On Max Id Vgs

7.8mOhm @ 12A, 10V

Yükseklik

558.8μm

Input Capacitance

1.01nF

Drain To Source Resistance

13.5mOhm

Drain To Source Voltage Vdss

25V

Turn Off Delay Time

9.1 ns

Reach Svhc

No SVHC

Fet Type

N-Channel

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Fall Time Typ

9.5 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Genişlik

3.95mm

Continuous Drain Current Id

12A

Yayın Yılı

2008

Kılıf / Paket

DirectFET™ Isometric S1

Tedarikçi Cihaz Paketi

DIRECTFET S1

Maks. Çalışma Sıcaklığı

175°C

Turn On Delay Time

8.4 ns

Min. Çalışma Sıcaklığı

-55°C

Gate Charge Qg Max Vgs

12nC @ 4.5V

Current Continuous Drain Id25

12A Ta 39A Tc

Pin Sayısı

5

Number Of Elements

1

Montaj Tipi

Surface Mount

Rds On Max

7.8 mΩ

Recovery Time

23 ns

Vgsth Max Id

2.35V @ 25μA

Montaj

Surface Mount

Dual Supply Voltage

25V

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation

1.8W

Terminal

SMD/SMT

Seri

HEXFET®

Drain To Source Breakdown Voltage

25V

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Power Dissipation Max

1.8W Ta 21W Tc