IRF6678TRPBF

Teknik Özellikler

Continuous Drain Current Id

24A

Yayın Yılı

2006

Genişlik

5.05mm

Case Connection

DRAIN

Fall Time Typ

8.1 ns

Akım Değeri

30A

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

2.2m Ω @ 30A, 10V

Turn Off Delay Time

27 ns

Fet Type

N-Channel

Vgs Max

±20V

Nominal Vgs

2.25 V

Input Capacitance Ciss Max Vds

5640pF @ 15V

Terminal Sayısı

3

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

65nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MX

Turn On Delay Time

21 ns

Pulsed Drain Currentmax Idm

240A

Yükseklik

506μm

Drainsource On Resistancemax

0.0022Ohm

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Power Dissipation Max

2.8W Ta 89W Tc

Rise Time

71ns

Voltage Rated Dc

30V

Radyasyon Dayanımı

No