IRF6665TRPBF

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

7.4 ns

Kılıf / Paket

DirectFET™ Isometric SH

Gate Charge Qg Max Vgs

13nC @ 10V

Contact Plating

Tin

Drainsource On Resistancemax

0.062Ohm

Yükseklik

506μm

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Element Configuration

Single

Power Dissipation Max

2.2W Ta 42W Tc

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

Voltage Rated Dc

100V

Rise Time

2.8ns

Montaj Tipi

Surface Mount

Pin Sayısı

3

Current Continuous Drain Id25

4.2A Ta 19A Tc

Vgsth Max Id

5V @ 250μA

Montaj

Surface Mount

Power Dissipation

42W

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Fall Time Typ

4.3 ns

Case Connection

DRAIN

Genişlik

3.95mm

Yayın Yılı

2006

Continuous Drain Current Id

3.4A

Rds On Max Id Vgs

62m Ω @ 5A, 10V

Akım Değeri

4.2A

Additional Feature

HIGH RELIABILITY

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

14 ns

Transistor Element Material

SILICON