IRF6662TRPBF

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

31nC @ 10V

Pulsed Drain Currentmax Idm

66A

Turn On Delay Time

11 ns

Kılıf / Paket

DirectFET™ Isometric MZ

Yükseklik

506μm

Operating Mode

ENHANCEMENT MODE

Direnç

31MOhm

Power Dissipation Max

2.8W Ta 89W Tc

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Rise Time

7.5ns

Radyasyon Dayanımı

No

Voltage Rated Dc

100V

Vgsth Max Id

4.9V @ 100μA

Avalanche Energy Rating Eas

39 mJ

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Pin Sayısı

7

Current Continuous Drain Id25

8.3A Ta 47A Tc

Seri

HEXFET®

Drain To Source Breakdown Voltage

100V

Power Dissipation

89W

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Genişlik

5.05mm

Yayın Yılı

2006

Continuous Drain Current Id

6.6A

Fall Time Typ

5.9 ns

Case Connection

DRAIN

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Akım Değeri

8.3A

Rds On Max Id Vgs

22m Ω @ 8.2A, 10V

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

24 ns

Input Capacitance Ciss Max Vds

1360pF @ 25V

Transistor Element Material

SILICON