IRF6648TRPBF

Teknik Özellikler

Power Dissipation Max

2.8W Ta 89W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Active

Rise Time

29ns

Radyasyon Dayanımı

No

Voltage Rated Dc

60V

Montaj

Surface Mount

Avalanche Energy Rating Eas

47 mJ

Vgsth Max Id

4.9V @ 150μA

Montaj Tipi

Surface Mount

Current Continuous Drain Id25

86A Tc

Pin Sayısı

5

Drain To Source Breakdown Voltage

60V

Seri

HEXFET®

Power Dissipation

89W

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

50nC @ 10V

Turn On Delay Time

16 ns

Pulsed Drain Currentmax Idm

260A

Kılıf / Paket

DirectFET™ Isometric MN

Drainsource On Resistancemax

0.007Ohm

Yükseklik

508μm

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

2120pF @ 25V

Threshold Voltage

4V

Transistor Element Material

SILICON

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Uzunluk

5.45mm

Jesd30 Code

R-XBCC-N3

Transistor Application

SWITCHING

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE