IRF6645TRPBF

Teknik Özellikler

Montaj Tipi

Surface Mount

Current Continuous Drain Id25

5.7A Ta 25A Tc

Pin Sayısı

7

Montaj

Surface Mount

Vgsth Max Id

4.9V @ 50μA

Avalanche Energy Rating Eas

29 mJ

Power Dissipation

42W

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

100V

Seri

HEXFET®

Power Dissipation Max

2.2W Ta 42W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Active

Radyasyon Dayanımı

No

Voltage Rated Dc

100V

Rise Time

5ns

Contact Plating

Tin

Drainsource On Resistancemax

0.035Ohm

Yükseklik

410μm

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

9.2 ns

Pulsed Drain Currentmax Idm

45A

Kılıf / Paket

DirectFET™ Isometric SJ

Gate Charge Qg Max Vgs

20nC @ 10V

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Çalışma Sıcaklığı

-40°C~150°C TJ

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e1

Transistor Element Material

SILICON

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

890pF @ 25V

Uzunluk

3.95mm

Jesd30 Code

R-XBCC-N3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)