IRF6644TRPBF

Teknik Özellikler

Akım Değeri

10.3A

Rds On Max Id Vgs

13m Ω @ 10.3A, 10V

Turn Off Delay Time

34 ns

Vgs Max

±20V

Fet Type

N-Channel

Additional Feature

LOW CONDUCTION LOSS

Continuous Drain Current Id

8.3A

Yayın Yılı

2006

Genişlik

5.0546mm

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

DRAIN

Fall Time Typ

16 ns

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e1

Çalışma Sıcaklığı

-40°C~150°C TJ

Nominal Vgs

4.8 V

Threshold Voltage

4.8V

Input Capacitance Ciss Max Vds

2210pF @ 25V

Terminal Sayısı

3

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

Yükseklik

508μm

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

47nC @ 10V

Kılıf / Paket

DirectFET™ Isometric MN

Turn On Delay Time

17 ns

Pulsed Drain Currentmax Idm

228A

Montaj

Surface Mount

Avalanche Energy Rating Eas

86 mJ

Vgsth Max Id

4.8V @ 150μA

Current Continuous Drain Id25

10.3A Ta 60A Tc

Pin Sayısı

5