IRF6633ATRPBF

Teknik Özellikler

Seri

HEXFET®

Drain To Source Breakdown Voltage

20V

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e1

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

42W

Vgsth Max Id

2.2V @ 250μA

Avalanche Energy Rating Eas

65 mJ

Montaj

Surface Mount

Pin Sayısı

3

Current Continuous Drain Id25

16A Ta 69A Tc

Tepe Reflow Süresi (maks. sn)

30

Number Of Elements

1

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

3 (168 Hours)

Rise Time

13ns

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Uzunluk

6.35mm

Input Capacitance Ciss Max Vds

1410pF @ 10V

Terminal Sayısı

3

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Transistor Element Material

SILICON

Power Dissipation Max

2.3W Ta 42W Tc

Turn Off Delay Time

8.4 ns

Vgs Max

±20V

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Yükseklik

700μm

Drainsource On Resistancemax

0.0056Ohm

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

5.6m Ω @ 16A, 10V

Gate Charge Qg Max Vgs

17nC @ 4.5V

Drain Currentmax Abs Id

69A

Kılıf / Paket

DirectFET™ Isometric MU

Turn On Delay Time

6.9 ns