IRF6623TRPBF

Teknik Özellikler

Drain To Source Breakdown Voltage

20V

Seri

HEXFET®

Power Dissipation

42W

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Montaj

Surface Mount

Vgsth Max Id

2.2V @ 250μA

Avalanche Energy Rating Eas

43 mJ

Montaj Tipi

Surface Mount

Pin Sayısı

5

Current Continuous Drain Id25

16A Ta 55A Tc

Rise Time

40ns

Radyasyon Dayanımı

No

Voltage Rated Dc

20V

Direnç

5.7MOhm

Power Dissipation Max

1.4W Ta 42W Tc

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Yükseklik

506μm

Gate Charge Qg Max Vgs

17nC @ 4.5V

Turn On Delay Time

9.7 ns

Kılıf / Paket

DirectFET™ Isometric ST

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Uzunluk

4.826mm

Jesd30 Code

R-XBCC-N3

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

1360pF @ 10V

Nominal Vgs

2.2 V

Threshold Voltage

2.2V