IRF6622TRPBF

Teknik Özellikler

Kılıf / Paket

DirectFET™ Isometric SQ

Pulsed Drain Currentmax Idm

120A

Turn On Delay Time

9.4 ns

Gate Charge Qg Max Vgs

17nC @ 4.5V

Gate To Source Voltage Vgs

20V

Case Connection

DRAIN

Fall Time Typ

4.6 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Genişlik

3.95mm

Continuous Drain Current Id

12A

Yayın Yılı

2006

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

13 ns

Vgs Max

±20V

Fet Type

N-Channel

Rds On Max Id Vgs

6.3m Ω @ 15A, 10V

Yükseklik

506μm

Akım Değeri

15A

Drainsource On Resistancemax

0.0063Ohm

Transistor Application

SWITCHING

Voltage Rated Dc

25V

Jesd30 Code

R-XBCC-N3

Radyasyon Dayanımı

No

Uzunluk

4.826mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

16ns

Parça Durumu

Obsolete

Terminal Sayısı

3

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Power Dissipation Max

2.2W Ta 34W Tc

Input Capacitance Ciss Max Vds

1450pF @ 13V

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-40°C~150°C TJ

Power Dissipation

34W

Seri

HEXFET®

Drain To Source Breakdown Voltage

25V