IRF6621TRPBF

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Power Dissipation Max

2.2W Ta 42W Tc

Voltage Rated Dc

30V

Radyasyon Dayanımı

No

Rise Time

14ns

Pin Sayısı

5

Current Continuous Drain Id25

12A Ta 55A Tc

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Vgsth Max Id

2.25V @ 250μA

Avalanche Energy Rating Eas

13 mJ

Terminal Pozisyonu

BOTTOM

Ambalaj

Tape & Reel (TR)

Power Dissipation

42W

Drain To Source Breakdown Voltage

30V

Seri

HEXFET®

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Kılıf / Paket

DirectFET™ Isometric SQ

Turn On Delay Time

12 ns

Pulsed Drain Currentmax Idm

96A

Gate Charge Qg Max Vgs

17.5nC @ 4.5V

Yükseklik

506μm

Drainsource On Resistancemax

0.0091Ohm

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Terminal Sayısı

2

Transistor Element Material

SILICON

Nominal Vgs

1.8 V

Input Capacitance Ciss Max Vds

1460pF @ 15V

Transistor Application

SWITCHING

Uzunluk

4.826mm

Jesd30 Code

R-XBCC-N2

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Fabrika Tedarik Süresi

13 Weeks

Çalışma Sıcaklığı

-40°C~150°C TJ