IRF6619TRPBF

Teknik Özellikler

Gate Charge Qg Max Vgs

57nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MX

Turn On Delay Time

21 ns

Pulsed Drain Currentmax Idm

240A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Yükseklik

506μm

Drainsource On Resistancemax

0.0022Ohm

Rise Time

71ns

Voltage Rated Dc

20V

Radyasyon Dayanımı

No

RoHS Durumu

RoHS Compliant

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Power Dissipation Max

2.8W Ta 89W Tc

Drain To Source Breakdown Voltage

20V

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

89W

Montaj

Surface Mount

Vgsth Max Id

2.45V @ 250μA

Avalanche Energy Rating Eas

240 mJ

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

5

Current Continuous Drain Id25

30A Ta 150A Tc

Montaj Tipi

Surface Mount

Continuous Drain Current Id

24A

Yayın Yılı

2006

Genişlik

5.05mm

Case Connection

DRAIN

Terminal Kaplaması

TIN SILVER COPPER

Fall Time Typ

9.3 ns

Turn Off Delay Time

25 ns

Vgs Max

±20V

Fet Type

N-Channel

Akım Değeri

30A

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

2.2m Ω @ 30A, 10V