IRF6618TRPBF

Teknik Özellikler

Genişlik

5.0546mm

Continuous Drain Current Id

170mA

Yayın Yılı

2007

Fall Time Typ

8.1 ns

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

DRAIN

Drain Currentmax Abs Id

29A

Akım Değeri

30A

Rds On Max Id Vgs

2.2m Ω @ 30A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Fet Type

N-Channel

Vgs Max

±20V

Turn Off Delay Time

27 ns

Input Capacitance Ciss Max Vds

5640pF @ 15V

Threshold Voltage

1.64V

Transistor Element Material

SILICON

Terminal Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Jesd30 Code

R-XBCC-N3

Uzunluk

6.35mm

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

JESD-609 Kodu

e1

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

65nC @ 4.5V

Pulsed Drain Currentmax Idm

240A

Turn On Delay Time

21 ns

Kılıf / Paket

DirectFET™ Isometric MT

Yükseklik

508μm

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Direnç

2.2MOhm

Power Dissipation Max

2.8W Ta 89W Tc

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant