IRF6614TRPBF

Teknik Özellikler

Yükseklik

506μm

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

29nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric ST

Turn On Delay Time

13 ns

Vgsth Max Id

2.25V @ 250μA

Avalanche Energy Rating Eas

22 mJ

Montaj

Surface Mount

Pin Sayısı

5

Current Continuous Drain Id25

12.7A Ta 55A Tc

Montaj Tipi

Surface Mount

Seri

HEXFET®

Drain To Source Breakdown Voltage

40V

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

42W

Direnç

8.3MOhm

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

2.1W Ta 42W Tc

Rise Time

27ns

Voltage Rated Dc

40V

Radyasyon Dayanımı

No

Akım Değeri

12.7A

Rds On Max Id Vgs

8.3m Ω @ 12.7A, 10V

Turn Off Delay Time

18 ns

Vgs Max

±20V

Fet Type

N-Channel

Genişlik

3.95mm

Yayın Yılı

2006

Continuous Drain Current Id

10.1A

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Case Connection

DRAIN

Fall Time Typ

3.6 ns

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1