IRF6613TR1

Teknik Özellikler

Vgsth Max Id

2.25V @ 250μA

Rds On Max Id Vgs

3.4m Ω @ 23A, 10V

Montaj Tipi

Surface Mount

Current Continuous Drain Id25

23A Ta 150A Tc

Fet Type

N-Channel

Vgs Max

±20V

Seri

HEXFET®

Çalışma Sıcaklığı

-40°C~150°C TJ

Drain To Source Voltage Vdss

40V

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

5950pF @ 15V

Yayın Yılı

2005

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Power Dissipation Max

2.8W Ta 89W Tc

Parça Durumu

Obsolete

RoHS Durumu

Non-RoHS Compliant

Nem Hassasiyeti (MSL)

3 (168 Hours)

Gate Charge Qg Max Vgs

63nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MT