IRF6612TR1

Teknik Özellikler

Rds On Max Id Vgs

3.3mOhm @ 24A, 10V

Reverse Recovery Time

19 ns

Drain To Source Resistance

2.5Ohm

Input Capacitance

3.97nF

Akım Değeri

24A

Drain To Source Voltage Vdss

30V

Fet Type

N-Channel

Vgs Max

±20V

Reach Svhc

No SVHC

Turn Off Delay Time

21 ns

Gate To Source Voltage Vgs

20V

Yayın Yılı

2005

Continuous Drain Current Id

24A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Maks. Çalışma Sıcaklığı

150°C

Min. Çalışma Sıcaklığı

-40°C

Tedarikçi Cihaz Paketi

DIRECTFET™ MX

Kılıf / Paket

DirectFET™ Isometric MX

Gate Charge Qg Max Vgs

45nC @ 4.5V

Montaj Tipi

Surface Mount

Rds On Max

3.3 mΩ

Current Continuous Drain Id25

24A Ta 136A Tc

Pin Sayısı

7

Dual Supply Voltage

30V

Montaj

Surface Mount

Vgsth Max Id

2.25V @ 250μA

Power Dissipation

2.8W

Çalışma Sıcaklığı

-40°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

30V

Terminal

SMD/SMT

Seri

HEXFET®

Power Dissipation Max

2.8W Ta 89W Tc

Kurşunsuz

Lead Free

RoHS Durumu

Non-RoHS Compliant

Parça Durumu

Obsolete

Input Capacitance Ciss Max Vds

3970pF @ 15V

Nominal Vgs

2.25 V

Threshold Voltage

2.25V

Voltage Rated Dc

30V