IRF6611TRPBF

Teknik Özellikler

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Parça Durumu

Obsolete

Power Dissipation Max

3.9W Ta 89W Tc

Rise Time

57ns

Voltage Rated Dc

30V

Radyasyon Dayanımı

No

Montaj

Surface Mount

Avalanche Energy Rating Eas

310 mJ

Vgsth Max Id

2.25V @ 250μA

Tepe Reflow Süresi (maks. sn)

40

Current Continuous Drain Id25

32A Ta 150A Tc

Pin Sayısı

5

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

30V

Seri

HEXFET®

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

BOTTOM

Power Dissipation

89W

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

56nC @ 4.5V

Kılıf / Paket

DirectFET™ Isometric MX

Turn On Delay Time

18 ns

Pulsed Drain Currentmax Idm

220A

Yükseklik

506μm

Drainsource On Resistancemax

0.0026Ohm

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

4860pF @ 15V

Terminal Sayısı

3

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

6.35mm

Jesd30 Code

R-XBCC-N3

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Continuous Drain Current Id

22A