IRF640NLPBF

Teknik Özellikler

Yükseklik

15.01mm

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Element Configuration

Single

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Pulsed Drain Currentmax Idm

72A

Turn On Delay Time

10 ns

Gate Charge Qg Max Vgs

67nC @ 10V

Pin Sayısı

3

Current Continuous Drain Id25

18A Tc

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Through Hole

Max Junction Temperature Tj

175°C

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

247 mJ

Montaj

Through Hole

Ambalaj

Tube

Power Dissipation

150W

Seri

HEXFET®

Drain To Source Breakdown Voltage

200V

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead, Lead Free

Number Of Channels

1

Power Dissipation Max

150W Tc

Direnç

150mOhm

Voltage Rated Dc

200V

Radyasyon Dayanımı

No

Rise Time

19ns

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

150m Ω @ 11A, 10V

Akım Değeri

18A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn Off Delay Time

23 ns

Vgs Max

±20V

Fet Type

N-Channel

Case Connection

DRAIN

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier