IRF630NSPBF

Teknik Özellikler

Ambalaj

Tube

Power Dissipation

82W

Drain To Source Breakdown Voltage

200V

Seri

HEXFET®

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

9.3A Tc

Pin Sayısı

3

Recovery Time

176 ns

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Avalanche Energy Rating Eas

94 mJ

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

200V

Radyasyon Dayanımı

No

Rise Time

14ns

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Discontinued

Power Dissipation Max

82W Tc

Direnç

300mOhm

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Reach Svhc

No SVHC

Contact Plating

Tin

Yükseklik

4.83mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

7.9 ns

Gate Charge Qg Max Vgs

35nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Number Of Elements

1

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Uzunluk

10.67mm

Jesd30 Code

R-PSSO-G2

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

2