IRF6218STRLPBF

Teknik Özellikler

Yükseklik

4.572mm

Drain To Source Voltage Vdss

150V

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time

21 ns

Gate Charge Qg Max Vgs

110nC @ 10V

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

27A Tc

Pin Sayısı

3

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Vgsth Max Id

5V @ 250μA

Ambalaj

Tape & Reel (TR)

Power Dissipation

250W

Drain To Source Breakdown Voltage

-150V

Seri

HEXFET®

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Not For New Designs

Power Dissipation Max

250W Tc

Radyasyon Dayanımı

No

Rise Time

70ns

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

150m Ω @ 16A, 10V

Turn Off Delay Time

35 ns

Fet Type

P-Channel

Vgs Max

±20V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Fall Time Typ

30 ns

Continuous Drain Current Id

-150A

Yayın Yılı

2004

Genişlik

9.65mm

Drain Currentmax Abs Id

27A

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks