IRF6201TRPBF

Teknik Özellikler

Rds On Max Id Vgs

2.45m Ω @ 27A, 4.5V

Yükseklik

1.4986mm

Drainsource On Resistancemax

0.00245Ohm

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

320 ns

Element Configuration

Single

Vgs Max

±12V

Fet Type

N-Channel

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

12V

Fall Time Typ

265 ns

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Continuous Drain Current Id

27A

Yayın Yılı

2009

Genişlik

3.9878mm

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time

29 ns

Gate Charge Qg Max Vgs

195nC @ 4.5V

Number Of Elements

1

Pin Sayısı

8

Fabrika Tedarik Süresi

15 Weeks

Current Continuous Drain Id25

27A Ta

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Vgsth Max Id

1.1V @ 100μA

Terminal Formu

GULL WING

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Power Dissipation

2.5W

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

20V

Seri

HEXFET®

JESD-609 Kodu

e3

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Terminal Sayısı

8

Transistor Element Material

SILICON

Power Dissipation Max

2.5W Ta

Input Capacitance Ciss Max Vds

8555pF @ 16V