IRF5305STRLPBF

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Terminal Formu

GULL WING

Dual Supply Voltage

-55V

Jesd30 Code

R-PSSO-G2

Uzunluk

10.668mm

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Terminal Sayısı

2

Input Capacitance Ciss Max Vds

1200pF @ 25V

Threshold Voltage

-4V

Nominal Vgs

-4 V

Additional Feature

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Fet Type

P-Channel

Vgs Max

±20V

Turn Off Delay Time

39 ns

Rds On Max Id Vgs

60m Ω @ 16A, 10V

Tepe Reflow Sıcaklığı (°C)

260

Akım Değeri

-31A

Fall Time Typ

63 ns

Case Connection

DRAIN

Genişlik

9.65mm

Continuous Drain Current Id

-31A

Yayın Yılı

2005

Power Dissipation

110W

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Drain To Source Breakdown Voltage

-55V

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

175°C

Recovery Time

110 ns

Current Continuous Drain Id25

31A Tc

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

30

Avalanche Energy Rating Eas

280 mJ

Vgsth Max Id

4V @ 250μA