IRF5210PBF

Teknik Özellikler

Power Dissipation

200W

Ambalaj

Tube

Drain To Source Breakdown Voltage

-100V

Terminal

Through Hole

Seri

HEXFET®

Max Junction Temperature Tj

175°C

Recovery Time

260 ns

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

30

Current Continuous Drain Id25

40A Tc

Pin Sayısı

3

Montaj

Through Hole

Avalanche Energy Rating Eas

780 mJ

Vgsth Max Id

4V @ 250μA

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Voltage Rated Dc

-100V

Rise Time

86ns

Number Of Channels

1

Power Dissipation Max

200W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Active

Direnç

60mOhm

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

100V

Element Configuration

Single

Reach Svhc

No SVHC

Contact Plating

Tin

Yükseklik

19.8mm

Turn On Delay Time

17 ns

Lead Pitch

2.54mm

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

180nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks