IRF520NPBF

Teknik Özellikler

Power Dissipation

48W

Ambalaj

Tube

Drain To Source Breakdown Voltage

100V

Seri

HEXFET®

Recovery Time

150 ns

Montaj Tipi

Through Hole

Current Continuous Drain Id25

9.7A Tc

Pin Sayısı

3

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Voltage Rated Dc

100V

Rise Time

23ns

Power Dissipation Max

48W Tc

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Reach Svhc

No SVHC

Contact Plating

Tin

Drainsource On Resistancemax

0.2Ohm

Yükseklik

15.24mm

Turn On Delay Time

4.5 ns

Lead Pitch

2.54mm

Kılıf / Paket

TO-220-3

Gate Charge Qg Max Vgs

25nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Dual Supply Voltage

100V

Uzunluk

10.5156mm

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Terminal Sayısı

3