IRF3808STRLPBF

Teknik Özellikler

Vgsth Max Id

4V @ 250μA

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

175°C

Current Continuous Drain Id25

106A Tc

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

30

Seri

HEXFET®

Drain To Source Breakdown Voltage

75V

Power Dissipation

200W

Ambalaj

Tape & Reel (TR)

Direnç

7MOhm

Power Dissipation Max

200W Tc

Number Of Channels

1

Parça Durumu

Active

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Rise Time

140ns

Radyasyon Dayanımı

No

Yükseklik

4.83mm

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

220nC @ 10V

Pulsed Drain Currentmax Idm

550A

Turn On Delay Time

16 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

5310pF @ 25V

Threshold Voltage

4V

Transistor Element Material

SILICON

Terminal Sayısı

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Jesd30 Code

R-PSSO-G2