IRF3808PBF

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Dual Supply Voltage

75V

Transistor Application

SWITCHING

Uzunluk

10.668mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Transistor Element Material

SILICON

Nominal Vgs

4 V

Threshold Voltage

4V

Input Capacitance Ciss Max Vds

5310pF @ 25V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Turn Off Delay Time

68 ns

Fet Type

N-Channel

Vgs Max

±20V

Rds On Max Id Vgs

7m Ω @ 82A, 10V

Akım Değeri

140A

Drain Currentmax Abs Id

75A

Case Connection

DRAIN

Fall Time Typ

120 ns

Yayın Yılı

2002

Continuous Drain Current Id

140A

Genişlik

4.826mm

Ambalaj

Tube

Power Dissipation

330W

Drain To Source Breakdown Voltage

75V

Seri

HEXFET®

Pin Sayısı

3

Current Continuous Drain Id25

140A Tc

Montaj Tipi

Through Hole

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

75V

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Rise Time

140ns

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant