IRF3805PBF

Teknik Özellikler

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Threshold Voltage

4V

Input Capacitance Ciss Max Vds

7960pF @ 25V

Terminal Sayısı

3

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

10.668mm

Rds On Max Id Vgs

3.3m Ω @ 75A, 10V

Turn Off Delay Time

93 ns

Vgs Max

±20V

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Genişlik

4.826mm

Yayın Yılı

2007

Continuous Drain Current Id

75A

Case Connection

DRAIN

Fall Time Typ

78 ns

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

940 mJ

Montaj

Through Hole

Current Continuous Drain Id25

75A Tc

Pin Sayısı

3

Montaj Tipi

Through Hole

Seri

HEXFET®

Drain To Source Breakdown Voltage

55V

Ambalaj

Tube

Power Dissipation

130W

Direnç

3.3MOhm

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

300W Tc

Rise Time

20ns

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Yükseklik

9.017mm