IRF3710PBF

Teknik Özellikler

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Dual Supply Voltage

100V

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Element Material

SILICON

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

3130pF @ 25V

Nominal Vgs

4 V

Threshold Voltage

4V

Uzunluk

10.54mm

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Rds On Max Id Vgs

23m Ω @ 28A, 10V

Akım Değeri

57A

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs Max

±20V

Fet Type

N-Channel

Turn Off Delay Time

45 ns

Fall Time Typ

47 ns

Case Connection

DRAIN

Yayın Yılı

2004

Continuous Drain Current Id

57A

Genişlik

4.69mm

Max Junction Temperature Tj

175°C

Recovery Time

220 ns

Montaj Tipi

Through Hole

Current Continuous Drain Id25

57A Tc

Pin Sayısı

3

Montaj

Through Hole

Avalanche Energy Rating Eas

280 mJ

Vgsth Max Id

4V @ 250μA

Power Dissipation

200W

Ambalaj

Tube

Drain To Source Breakdown Voltage

100V

Terminal

Through Hole

Seri

HEXFET®

Power Dissipation Max

200W Tc

Number Of Channels

1

Kurşunsuz

Lead Free