
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Gate Charge Qg Max Vgs
- 26nC @ 4.5V
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time
- 13 ns
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Gate To Source Voltage Vgs
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 4.826mm
- Rise Time
- 41ns
- Radyasyon Dayanımı
- No
- Direnç
- 6.3MOhm
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Power Dissipation Max
- 79W Tc
- Seri
- HEXFET®
- Drain To Source Breakdown Voltage
- 30V
- Ambalaj
- Tape & Reel (TR)
- Terminal Pozisyonu
- SINGLE
- Power Dissipation
- 79W
- Avalanche Energy Rating Eas
- 60 mJ
- Vgsth Max Id
- 2.25V @ 250μA
- Montaj
- Surface Mount
- Current Continuous Drain Id25
- 87A Tc
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 30
- Montaj Tipi
- Surface Mount
- Drain Currentmax Abs Id
- 42A
- Genişlik
- 9.65mm
- Continuous Drain Current Id
- 87A
- Yayın Yılı
- 2001
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Case Connection
- DRAIN
- Fall Time Typ
- 4.7 ns
- Turn Off Delay Time
- 16 ns
- Fet Type
- N-Channel
- Vgs Max
- ±20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Rds On Max Id Vgs
- 6.3m Ω @ 21A, 10V
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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