IRF3708PBF

Teknik Özellikler

Voltage Rated Dc

30V

Jedec95 Code

TO-220AB

Radyasyon Dayanımı

No

Rise Time

50ns

Parça Durumu

Not For New Designs

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Power Dissipation Max

87W Tc

Direnç

12MOhm

Ambalaj

Tube

Power Dissipation

87W

Seri

HEXFET®

Terminal

Through Hole

Drain To Source Breakdown Voltage

30V

Pin Sayısı

3

Current Continuous Drain Id25

62A Tc

Montaj Tipi

Through Hole

Recovery Time

65 ns

Vgsth Max Id

2V @ 250μA

Montaj

Through Hole

Kılıf / Paket

TO-220-3

Pulsed Drain Currentmax Idm

248A

Turn On Delay Time

7.2 ns

Gate Charge Qg Max Vgs

24nC @ 4.5V

Gate To Source Voltage Vgs

12V

Drive Voltage Max Rds On Min Rds On

2.8V 10V

Operating Mode

ENHANCEMENT MODE

Reach Svhc

No SVHC

Element Configuration

Single

Yükseklik

8.763mm

Transistor Application

SWITCHING

Uzunluk

10.5156mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Transistor Element Material

SILICON

Threshold Voltage

2V

Nominal Vgs

2 V

Input Capacitance Ciss Max Vds

2417pF @ 15V

Çalışma Sıcaklığı

-55°C~175°C TJ