IRF3315STRLPBF

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Currentmax Idm

84A

Turn On Delay Time

9.6 ns

Gate Charge Qg Max Vgs

95nC @ 10V

Yükseklik

4.826mm

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Parça Durumu

Not For New Designs

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

3.8W Ta 94W Tc

Direnç

82mOhm

Voltage Rated Dc

150V

Radyasyon Dayanımı

No

Rise Time

32ns

Current Continuous Drain Id25

21A Tc

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Surface Mount

Vgsth Max Id

4V @ 250μA

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Power Dissipation

94W

Seri

HEXFET®

Drain To Source Breakdown Voltage

150V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection

DRAIN

Fall Time Typ

38 ns

Genişlik

9.65mm

Continuous Drain Current Id

21A

Yayın Yılı

1997

Tepe Reflow Sıcaklığı (°C)

260

Rds On Max Id Vgs

82m Ω @ 12A, 10V

Akım Değeri

21A

Additional Feature

AVALANCHE RATED

Turn Off Delay Time

49 ns

Fet Type

N-Channel

Vgs Max

±20V