IRF3315PBF

Teknik Özellikler

Drain To Source Breakdown Voltage

150V

Seri

HEXFET®

Terminal

Through Hole

Ambalaj

Tube

Power Dissipation

136W

Montaj

Through Hole

Vgsth Max Id

4V @ 250μA

Current Continuous Drain Id25

23A Tc

Pin Sayısı

3

Recovery Time

260 ns

Montaj Tipi

Through Hole

Rise Time

32ns

Voltage Rated Dc

150V

Radyasyon Dayanımı

No

Jedec95 Code

TO-220AB

Direnç

82mOhm

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead, Lead Free

Parça Durumu

Not For New Designs

Power Dissipation Max

94W Tc

Element Configuration

Single

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Yükseklik

8.77mm

Gate Charge Qg Max Vgs

95nC @ 10V

Kılıf / Paket

TO-220-3

Turn On Delay Time

9.6 ns

Pulsed Drain Currentmax Idm

84A

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~175°C TJ

Dual Supply Voltage

150V

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

10.54mm

Nominal Vgs

4 V