IRF3007STRLPBF

Teknik Özellikler

Seri

HEXFET®

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

946 mJ

Montaj

Surface Mount

Terminal Formu

GULL WING

Current Continuous Drain Id25

62A Tc

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

30

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G2

Input Capacitance Ciss Max Vds

3270pF @ 25V

Parça Durumu

Active

Terminal Sayısı

2

Kurşunsuz

Lead Free

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

120W Tc

Transistor Element Material

SILICON

Fet Type

N-Channel

Vgs Max

±20V

Drain To Source Voltage Vdss

75V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.0126Ohm

Tepe Reflow Sıcaklığı (°C)

260

Ds Breakdown Voltagemin

75V

Rds On Max Id Vgs

12.6m Ω @ 48A, 10V

Gate Charge Qg Max Vgs

130nC @ 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Currentmax Idm

320A

Drive Voltage Max Rds On Min Rds On

10V