IRF2903ZSTRLP

Teknik Özellikler

Radyasyon Dayanımı

No

Rise Time

100ns

Power Dissipation Max

290W Tc

Parça Durumu

Obsolete

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Direnç

2.4MOhm

Power Dissipation

290W

Ambalaj

Tape & Reel (TR)

Seri

HEXFET®

Drain To Source Breakdown Voltage

30V

Montaj Tipi

Surface Mount

Pin Sayısı

3

Current Continuous Drain Id25

75A Tc

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

4V @ 150μA

Avalanche Energy Rating Eas

820 mJ

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

1020A

Turn On Delay Time

24 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

240nC @ 10V

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Jesd30 Code

R-PSSO-G2

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Terminal Sayısı

2

Input Capacitance Ciss Max Vds

6320pF @ 25V

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

16 Weeks

Number Of Elements

1

Terminal Formu

GULL WING

Fall Time Typ

37 ns

Case Connection

DRAIN