IRF2807ZPBF

Teknik Özellikler

Threshold Voltage

4V

Pin Sayısı

3

Seri

HEXFET®

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

Case Connection

DRAIN

Element Configuration

Single

Power Dissipation

170W

Yayın Yılı

2003

Vgsth Max Id

4V @ 250μA

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead, Lead Free

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

3270pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

75V

Power Dissipation Max

170W Tc

Parça Durumu

Active

Direnç

9.4Ohm

Terminal Sayısı

3

Jedec95 Code

TO-220AB

Yükseklik

9.017mm

Fet Type

N-Channel

Number Of Elements

1

Turn On Delay Time

18 ns

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

40 ns

Genişlik

4.826mm

Kılıf / Paket

TO-220-3

Fall Time Typ

45 ns

Reach Svhc

No SVHC

Rds On Max Id Vgs

9.4m Ω @ 53A, 10V

Vgs Max

±20V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Nominal Vgs

4 V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Akım Değeri

75A

Current Continuous Drain Id25

75A Tc