IRF2204SPBF

Teknik Özellikler

Avalanche Energy Rating Eas

460 mJ

Element Configuration

Single

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation

200W

Case Connection

DRAIN

Transistor Element Material

SILICON

Threshold Voltage

4V

Pin Sayısı

3

Seri

HEXFET®

Montaj Tipi

Surface Mount

Parça Durumu

Not For New Designs

Direnç

3.6mOhm

Terminal Sayısı

2

Tepe Reflow Sıcaklığı (°C)

260

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

40V

Power Dissipation Max

200W Tc

Drain Currentmax Abs Id

75A

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

5890pF @ 25V

Yayın Yılı

2002

Vgsth Max Id

4V @ 250μA

Ambalaj

Tube

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Genişlik

9.65mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time Typ

110 ns

Reach Svhc

No SVHC

Rds On Max Id Vgs

3.6m Ω @ 130A, 10V

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

10V

JESD-609 Kodu

e3

Turn Off Delay Time

62 ns

Fet Type

N-Channel

Number Of Elements

1

Turn On Delay Time

15 ns

Pulsed Drain Currentmax Idm

850A

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yükseklik

4.572mm