IRF1405STRLPBF

Teknik Özellikler

Pulsed Drain Currentmax Idm

680A

Number Of Elements

1

Turn On Delay Time

13 ns

Fet Type

N-Channel

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yükseklik

5.084mm

Number Of Channels

1

Vgs Max

±20V

Rds On Max Id Vgs

5.3m Ω @ 101A, 10V

Fall Time Typ

110 ns

Genişlik

9.65mm

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Junction Temperature Tj

175°C

Turn Off Delay Time

130 ns

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

10V

Radyasyon Dayanımı

No

Recovery Time

130 ns

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

260nC @ 10V

Transistor Application

SWITCHING

Current Continuous Drain Id25

131A Tc

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Akım Değeri

131A

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

12 Weeks

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Voltage Rated Dc

55V

Terminal Formu

GULL WING

Continuous Drain Current Id

131A

Uzunluk

10.668mm

Rise Time

190ns

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Seri

HEXFET®

Pin Sayısı

3

Element Configuration

Single

Tepe Reflow Süresi (maks. sn)

30